In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

This paper proposes an advanced control strategy to enhance performance of shunt active power filter (APF). The proposed control scheme requires only two current sensors at the supply side and does not need a harmonic detector. In order to make the supply currents sinusoidal, an effective harmonic compensation method is developed with the aid of a conventional proportional-integral (PI) and vector PI controllers. The absence of the harmonic detector not only simplifies the control scheme but also significantly improves the accuracy of the APF, since the control performance is no longer affected by the performance of the harmonic tracking process. Furthermore, the total cost to implement the proposed APF becomes lower, owing to the minimized current sensors and the use of a four-switch three-phase inverter. Despite the simplified hardware, the performance of the APF is improved significantly compared to the traditional control scheme, thanks to the effectiveness of the proposed compensation scheme. The proposed control scheme is theoretically analyzed, and a 1.5-kVA APF is built in the laboratory to validate the feasibility of the proposed control strategy.

In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

In this work, porous carbon-vanadium oxynitride (C-V₂NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 °C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V₂NO single-phase cubic structure. The C-V₂NO obtained at 700 °C had a low surface area (91.6 m² g^-1), a moderate degree of graphitization, and a broader pore size distribution. The C-V₂NO obtained at 800 °C displayed an interconnected network with higher surface area (121.6 m² g^-1) and a narrower pore size distribution. In contrast, at 900 °C, the C-V₂NO displayed a disintegrated network and a decrease in the surface area (113 m² g^-1). All the synthesized C-V₂NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V₂NO@800 °C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V₂NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V₂NO@800 °C displayed specific energy and power of 38 W h kg^-1 and 764 W kg^-1, respectively, at 1 A g^-1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g^-1. This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

This work reports a method to select the optimal working frequency in transversal bulk resonator acoustophoretic devices by electrical impedance measurements. The impedance spectra of acoustophoretic devices are rich in spurious resonance peaks originating from different resonance modes in the system not directly related to the channel resonance, why direct measurement of the piezoelectric transducer impedance spectra is not a viable strategy. This work presents, for the first time, that the resonance modes of microchip integrated acoustophoresis channels can be identified by sequentially measuring the impedance spectra of the acoustophoretic device when the channel is filled with two different fluids and subsequently calculate the Normalized Differential Spectrum (NDS). Seven transversal bulk resonator acoustophoretic devices of different materials and designs were tested with successful results. The developed method enables a rapid, reproducible and precise determination of the optimal working frequency.

This work reports a method to select the optimal working frequency in transversal bulk resonator acoustophoretic devices by electrical impedance measurements. The impedance spectra of acoustophoretic devices are rich in spurious resonance peaks originating from different resonance modes in the system not directly related to the channel resonance, why direct measurement of the piezoelectric transducer impedance spectra is not a viable strategy. This work presents, for the first time, that the resonance modes of microchip integrated acoustophoresis channels can be identified by sequentially measuring the impedance spectra of the acoustophoretic device when the channel is filled with two different fluids and subsequently calculate the Normalized Differential Spectrum (NDS). Seven transversal bulk resonator acoustophoretic devices of different materials and designs were tested with successful results. The developed method enables a rapid, reproducible and precise determination of the optimal working frequency.