Abstract: Insulated gate bipolar transistor(IGBT) is widely used in fields such as new energy generation and storage, high voltage direct current transmission(HVDC), electric traction, and electrified transportation due to their high efficiency, large capacity, and low cost. However, once the IGBT module fails, it will disrupt the normal operation of related devices and equipment, causing a series of chain accidents, resulting in personal injury and serious economic losses. According to a survey, approximately 34% of reliability issues in photovoltaic power plants are caused by IGBT module failures, therefore, IGBT module reliability issues are receiving increasing attention. The related research results indicate that there is a close relationship between the junction temperature of IGBT modules and module reliability issues. How to quickly and accurately obtain the real-time junction temperature of current IGBT modules is the key to IGBT module reliability research. A modeling method is proposed for characterizing the relationship between the on-state voltage, junction temperature, and collector current of IGBT modules through in-depth analysis and research on the V-I output characteristic curve of IGBT modules. The characterization model established using this proposed method can conveniently and quickly extract the junction temperature of IGBT modules, and the effectiveness of the IGBT module junction temperature extraction strategy based on this modeling method has been verified through experiments. In addition, this modeling method takes into account the impact of module bonding wire aging and provides corresponding model calibration methods and junction temperature extraction strategies.